For the current situation of China's silicon wafers, silicon carbide (SiC) substrates, and nitride (GaN) markets, foreign capital has issued the latest report analysis. China's local 12-inch silicon wafer suppliers can meet 41% of China'...
For the current situation of China's silicon wafers, silicon carbide (SiC) substrates, and nitride (GaN) markets, foreign capital has issued the latest report analysis. China's local 12-inch silicon wafer suppliers can meet 41% of China's demand in 2024, and it is estimated that it will reach 54% in 2027, while 8-inch can meet 64% in 2024, and it is estimated that it will reach 78% in 2027.
Foreign Information said that the Chinese local 12-inch silicon wafer round supplier can meet 41% of China's demand in 2024 and is expected to grow to 54% in 2027, while the Chinese local 6-inch silicon carbide (SiC) substrate can meet 80% of demand in 2024 and is expected to grow to 87% in 2027.
Foreign information points out that the average sales price of 8-inch silicon wafers in China will drop by 10% between 2024 and 2026, and the price competition will be more intense than that of 12-inch silicon wafers, while the average sales price of SiC will be more intense from the annual sales rate of -6% between 2024. As for the price gap of IGBTs, it makes it more competitive.
In terms of production capacity, foreign data pointed out that China's local 12-inch silicon wafer production capacity will be expanded at a 21% annual synthesis rate from 2024 to 2027, exceeding the annual synthesis rate of 3% of 8-inch silicon wafer production capacity. From 2024 to 2027, the 6-inch SiC substrate will continue to be expanded at a 26% annual synthesis rate, and as for the 8-inch SiC substrate, the annual synthesis rate of 96% annual synthesis rate.
Foreign assets believe that the production of China's three major silicon wafer suppliers is expected to meet 36% of the Chinese market demand by 2027, while the proportion in 2024 is only 26%, and the SiC substrate market size is expected to reach US$637 million by 2025 and increase its annual synthesis rate to US$2.8 billion by 2030 at a 34% annual synthesis rate, mainly benefiting from the increase in electric vehicle transmission and the increase in SiC utilization rate.
Foreign information is emphasized, it is expected that in 2025, the scale of China's GaN device market will reach US$431 million, and by 2030, the annual synthetic growth rate will reach 30%, reach US$1.6 billion, mainly benefiting from the promotion of electric vehicles, data centers and consumer electronic products. Therefore, the name is given to Northern Huacai, SICC, SUMCO, Shinyue Chemical, Mitsubishi Mada, and Influenced "coded" ratings.
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